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Properties of ge-doped silica preform by raman spectroscopy

Siti Shafiqah, AS, Amin, YM, Md Nor, R, Tamchek, N, Khairul Anuar, MS, Abdul Rashid, HA and Bradley, DA (2015) Properties of ge-doped silica preform by raman spectroscopy ARPN Journal of Engineering and Applied Sciences, 10 (15). pp. 6214-6218.

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Abstract

©2006-2015 Asian Research Publishing Network (ARPN).In the present work, the structural modifications of Ge-doped silica preforms due to γ-irradiation at room temperature have been investigated using Raman spectroscopy. The MCVD fabricated preforms labelled as P1 and P2 are distinguishable by the oxidation and thermal history during the fabrication process, in which related to the oxygen bonding of SiO4 tetrahedral. From Raman analysis, the 480 cm-1(D1) and 609 cm-1(D2) peaks are the main network features of pure and doped silica glass, suggest the formation of defect centers in the preforms. The structural modifications of this defects centers are more sensitive in P2, due to the oxygen deficient state of the preform.

Item Type: Article
Authors :
NameEmailORCID
Siti Shafiqah, ASUNSPECIFIEDUNSPECIFIED
Amin, YMUNSPECIFIEDUNSPECIFIED
Md Nor, RUNSPECIFIEDUNSPECIFIED
Tamchek, NUNSPECIFIEDUNSPECIFIED
Khairul Anuar, MSUNSPECIFIEDUNSPECIFIED
Abdul Rashid, HAUNSPECIFIEDUNSPECIFIED
Bradley, DAd.a.bradley@surrey.ac.ukUNSPECIFIED
Date : 1 January 2015
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 13:44
Last Modified : 17 May 2017 15:12
URI: http://epubs.surrey.ac.uk/id/eprint/840202

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