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The effect of aluminium on the post-anneal concentration of ion implanted bismuth in silica thin films

Southern-Holland, R, Halsall, MP, Crowe, IF, Yang, P and Gwilliam, RM (2015) The effect of aluminium on the post-anneal concentration of ion implanted bismuth in silica thin films NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 365. pp. 86-88.

Full text not available from this repository.
Item Type: Article
Authors :
NameEmailORCID
Southern-Holland, RUNSPECIFIEDUNSPECIFIED
Halsall, MPUNSPECIFIEDUNSPECIFIED
Crowe, IFUNSPECIFIEDUNSPECIFIED
Yang, PUNSPECIFIEDUNSPECIFIED
Gwilliam, RMr.gwilliam@surrey.ac.ukUNSPECIFIED
Date : 15 December 2015
Identification Number : https://doi.org/10.1016/j.nimb.2015.07.036
Uncontrolled Keywords : Science & Technology, Technology, Physical Sciences, Instruments & Instrumentation, Nuclear Science & Technology, Physics, Atomic, Molecular & Chemical, Physics, Nuclear, Physics, Bismuth, Aluminium, Rutherford backscattering spectroscopy, NEAR-INFRARED LUMINESCENCE, OPTICAL AMPLIFICATION, LASER, GLASS
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 13:41
Last Modified : 17 May 2017 15:12
URI: http://epubs.surrey.ac.uk/id/eprint/840078

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