The effect of aluminium on the post-anneal concentration of ion implanted bismuth in silica thin films

Southern-Holland, R, Halsall, MP, Crowe, IF, Yang, P and Gwilliam, RM (2015) The effect of aluminium on the post-anneal concentration of ion implanted bismuth in silica thin films NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 365. pp. 86-88.

Full text not available from this repository.

Item Type:	Article
Authors :	Name Email ORCID Southern-Holland, R UNSPECIFIED UNSPECIFIED Halsall, MP UNSPECIFIED UNSPECIFIED Crowe, IF UNSPECIFIED UNSPECIFIED Yang, P UNSPECIFIED UNSPECIFIED Gwilliam, RM r.gwilliam@surrey.ac.uk UNSPECIFIED
Date :	15 December 2015
Identification Number :	https://doi.org/10.1016/j.nimb.2015.07.036
Uncontrolled Keywords :	Science & Technology, Technology, Physical Sciences, Instruments & Instrumentation, Nuclear Science & Technology, Physics, Atomic, Molecular & Chemical, Physics, Nuclear, Physics, Bismuth, Aluminium, Rutherford backscattering spectroscopy, NEAR-INFRARED LUMINESCENCE, OPTICAL AMPLIFICATION, LASER, GLASS
Related URLs :	Author
Depositing User :	Symplectic Elements
Date Deposited :	17 May 2017 13:41
Last Modified :	17 May 2017 15:12
URI:	http://epubs.surrey.ac.uk/id/eprint/840078

Actions (login required)

View Item

Downloads