The effect of aluminium on the post-anneal concentration of ion implanted bismuth in silica thin films
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Southern-Holland, R, Halsall, MP, Crowe, IF, Yang, P and Gwilliam, RM (2015) The effect of aluminium on the post-anneal concentration of ion implanted bismuth in silica thin films NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 365. pp. 86-88.
Full text not available from this repository.| Item Type: | Article | ||||||||||||||||||
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| Date : | 15 December 2015 | ||||||||||||||||||
| DOI : | 10.1016/j.nimb.2015.07.036 | ||||||||||||||||||
| Uncontrolled Keywords : | Science & Technology, Technology, Physical Sciences, Instruments & Instrumentation, Nuclear Science & Technology, Physics, Atomic, Molecular & Chemical, Physics, Nuclear, Physics, Bismuth, Aluminium, Rutherford backscattering spectroscopy, NEAR-INFRARED LUMINESCENCE, OPTICAL AMPLIFICATION, LASER, GLASS | ||||||||||||||||||
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| Depositing User : | Symplectic Elements | ||||||||||||||||||
| Date Deposited : | 17 May 2017 13:41 | ||||||||||||||||||
| Last Modified : | 16 Jan 2019 18:48 | ||||||||||||||||||
| URI: | http://epubs.surrey.ac.uk/id/eprint/840078 |
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