Light emission from rare-earths in dislocation engineered silicon substrates

Lourenco, MA, Ludurczak, W, Prins, AD, Milosavljevic, M, Gwilliam, RM and Homewood, KP (2015) Light emission from rare-earths in dislocation engineered silicon substrates JAPANESE JOURNAL OF APPLIED PHYSICS, 54 (7), ARTN 07JB0.

Full text not available from this repository.

Item Type:	Article
Authors :	Name Email ORCID Lourenco, MA m.lourenco@surrey.ac.uk Ludurczak, W Prins, AD Milosavljevic, M Gwilliam, RM r.gwilliam@surrey.ac.uk Homewood, KP k.homewood@surrey.ac.uk
Date :	1 July 2015
Identification Number :	10.7567/JJAP.54.07JB01
Uncontrolled Keywords :	Science & Technology, Physical Sciences, Physics, Applied, Physics, THULIUM-DOPED SILICON, EMITTING DIODE, CRYSTALLINE SILICON, LUMINESCENCE PROPERTIES, OPTICAL-PROPERTIES, RAMAN LASER, MU M, PHOTOLUMINESCENCE, NANOCRYSTALS, SPECTRA
Related URLs :	Author
Depositing User :	Symplectic Elements
Date Deposited :	17 May 2017 13:40
Last Modified :	17 May 2017 15:12
URI:	http://epubs.surrey.ac.uk/id/eprint/840030

Actions (login required)

View Item

Downloads