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Light emission from rare-earths in dislocation engineered silicon substrates

Lourenco, MA, Ludurczak, W, Prins, AD, Milosavljevic, M, Gwilliam, RM and Homewood, KP (2015) Light emission from rare-earths in dislocation engineered silicon substrates JAPANESE JOURNAL OF APPLIED PHYSICS, 54 (7), ARTN 07JB0.

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Item Type: Article
Authors :
NameEmailORCID
Lourenco, MAm.lourenco@surrey.ac.ukUNSPECIFIED
Ludurczak, WUNSPECIFIEDUNSPECIFIED
Prins, ADUNSPECIFIEDUNSPECIFIED
Milosavljevic, MUNSPECIFIEDUNSPECIFIED
Gwilliam, RMr.gwilliam@surrey.ac.ukUNSPECIFIED
Homewood, KPk.homewood@surrey.ac.ukUNSPECIFIED
Date : 1 July 2015
Identification Number : https://doi.org/10.7567/JJAP.54.07JB01
Uncontrolled Keywords : Science & Technology, Physical Sciences, Physics, Applied, Physics, THULIUM-DOPED SILICON, EMITTING DIODE, CRYSTALLINE SILICON, LUMINESCENCE PROPERTIES, OPTICAL-PROPERTIES, RAMAN LASER, MU M, PHOTOLUMINESCENCE, NANOCRYSTALS, SPECTRA
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 13:40
Last Modified : 17 May 2017 15:12
URI: http://epubs.surrey.ac.uk/id/eprint/840030

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