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Bulk barrier source-gated transistors with improved drain current dynamic range and temperature coefficient

Sporea, RA, Wright, W, Shannon, JM and Silva, SRP (2015) Bulk barrier source-gated transistors with improved drain current dynamic range and temperature coefficient ECS Transactions, 67 (1). pp. 91-96.

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Abstract

© The Electrochemical Society.Source-gated thin-film transistors (SGTs) have remarkable properties related to low-voltage amplification, tolerance to process variation and electrical stability. They rely on a potential barrier at the source in their operation, and usually this barrier is realized through a Schottky contact. Here, we study SGTs with source barriers made by doping the source region of the semiconductor to form bulk unipolar diodes (BUD). A BUSGT can have much higher drain current with a lower activation energy, resulting in higher switching speed and improved transconductance. Barriers made via doping also provide a wider range of barrier heights compared with Schottky contacts. We discuss design parameters for BUSGTs and compare these devices with SBSGTs.

Item Type: Article
Authors :
NameEmailORCID
Sporea, RAr.a.sporea@surrey.ac.ukUNSPECIFIED
Wright, WUNSPECIFIEDUNSPECIFIED
Shannon, JMUNSPECIFIEDUNSPECIFIED
Silva, SRPs.silva@surrey.ac.ukUNSPECIFIED
Date : 1 January 2015
Identification Number : https://doi.org/10.1149/06701.0091ecst
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 13:39
Last Modified : 17 May 2017 15:12
URI: http://epubs.surrey.ac.uk/id/eprint/839960

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