Single event effects in power MOSFETs and SRAMs due to 3 MeV, 14 MeV and fission neutrons

Hands, A, Morris, P, Dyer, C, Ryden, K and Truscott, P (2011) Single event effects in power MOSFETs and SRAMs due to 3 MeV, 14 MeV and fission neutrons IEEE Transactions on Nuclear Science, 58 (3). pp. 952-959.

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Abstract

Various SRAM and MOSFET devices were exposed to 3 MeV and 14 MeV neutrons at a fusion facility and to a fission neutron spectrum with a californium-252 source. Single event burnout (SEB) was observed in several of the MOSFETs in all three environmentsthe first time this phenomenon has been observed at neutron energies below 10 MeV. In addition to observing single event upsets (SEU) and single event latchup (SEL) in the SRAMs, two devices experienced significant multiple cell upset (MCU) effects which dominated the upset rate. The physical mechanisms underlying these phenomena and the consequences for various radiation environments are discussed. © 2011 IEEE.

Item Type:	Article
Divisions :	Surrey research (other units)
Authors :	Name Email ORCID Hands, A Morris, P Dyer, C Ryden, K k.ryden@surrey.ac.uk Truscott, P
Date :	1 June 2011
DOI :	10.1109/TNS.2011.2106142
Depositing User :	Symplectic Elements
Date Deposited :	17 May 2017 13:38
Last Modified :	25 Jan 2020 00:13
URI:	http://epubs.surrey.ac.uk/id/eprint/839942

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