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Large-scale multiple cell upsets in 90 nm commercial SRAMs during neutron irradiation

Hands, A, Morris, P, Ryden, K and Dyer, C (2012) Large-scale multiple cell upsets in 90 nm commercial SRAMs during neutron irradiation IEEE Transactions on Nuclear Science, 59 (6). pp. 2824-2830.

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Abstract

During neutron irradiation of 4-Mb SRAMs, large-scale multiple cell upsets (MCUs) were observed. These were observed in 90-nm devices at accelerated test facilities providing fission, fusion, and spallation neutron environments. The MCUs are shown to manifest themselves in 2-D patterns encompassing scores of cells, which, even with bit interleaving, lead to uncorrectable multiple bit upsets (MBU) in the same word. The mechanism behind the MCU appears to be micro-latching within blocks of the memory array that are powered up sequentially during the read cycle of the device. © 1963-2012 IEEE.

Item Type: Article
Authors :
NameEmailORCID
Hands, AUNSPECIFIEDUNSPECIFIED
Morris, PUNSPECIFIEDUNSPECIFIED
Ryden, Kk.ryden@surrey.ac.ukUNSPECIFIED
Dyer, CUNSPECIFIEDUNSPECIFIED
Date : 25 October 2012
Identification Number : https://doi.org/10.1109/TNS.2012.2217383
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 13:38
Last Modified : 17 May 2017 15:12
URI: http://epubs.surrey.ac.uk/id/eprint/839940

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