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Towards the limit of ion implantation and rapid thermal annealing as a technique for shallow junction formation

Altrip, JL, Evans, AGR, Logan, JR and Jeynes, C (1990) Towards the limit of ion implantation and rapid thermal annealing as a technique for shallow junction formation European Solid-State Device Research Conference. pp. 221-224.

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Abstract

© 1990 IOP Publishing Ltd.High temperature, very short time annealing techniques have been used to study dopant activation during and immediately after solid phase epitaxial regrowth of amorphous layers produced by ion implantation of As into Si. Short annealing timescales have revealed electrically inactive As tails, correlated with a region of implant-induced excess point defects, indicating the formation of stable dopant-interstitial complexes which are not removed during the timescales of these anneals.

Item Type: Article
Authors :
NameEmailORCID
Altrip, JLUNSPECIFIEDUNSPECIFIED
Evans, AGRUNSPECIFIEDUNSPECIFIED
Logan, JRUNSPECIFIEDUNSPECIFIED
Jeynes, Cc.jeynes@surrey.ac.ukUNSPECIFIED
Date : 1 January 1990
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 13:30
Last Modified : 17 May 2017 15:11
URI: http://epubs.surrey.ac.uk/id/eprint/839464

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