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Hydrogen passivation of titanium impurities in silicon: Effect of doping conditions

Santos, P, Coutinho, J, Torres, VJB, Rayson, MJ and Briddon, PR (2014) Hydrogen passivation of titanium impurities in silicon: Effect of doping conditions APPLIED PHYSICS LETTERS, 105 (3), ARTN 03210.

Full text not available from this repository.
Item Type: Article
Authors :
NameEmailORCID
Santos, PUNSPECIFIEDUNSPECIFIED
Coutinho, JUNSPECIFIEDUNSPECIFIED
Torres, VJBUNSPECIFIEDUNSPECIFIED
Rayson, MJm.j.rayson@surrey.ac.ukUNSPECIFIED
Briddon, PRUNSPECIFIEDUNSPECIFIED
Date : 21 July 2014
Identification Number : https://doi.org/10.1063/1.4891575
Uncontrolled Keywords : Science & Technology, Physical Sciences, Physics, Applied, Physics, SOLAR-GRADE SILICON, SI, REEXAMINATION, COMPLEXES, DEFECTS, CELLS, TI
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 13:30
Last Modified : 17 May 2017 13:30
URI: http://epubs.surrey.ac.uk/id/eprint/839451

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