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Experimental study of depletion mode Si/SiGe MOSFETs for low-temperature operation

Fobelets, K, Ferguson, R, Gaspari, V, Velazquez, E, Michelakis, K, Despotopoulos, S, Zhang, J and Papavassiliou, C (2002) Experimental study of depletion mode Si/SiGe MOSFETs for low-temperature operation European Solid-State Device Research Conference. pp. 555-558.

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Abstract

N-channel enhancement mode Si/SiGe MOSFETs are characterised and studied over a wide temperature range of 10K<T<300K. It is shown that the sensitivity of quantum well based MODFETs to temperature changes results in an optimal operation temperature around 80K. The influence of LDD structures at sufficiently high drain voltages is analysed.

Item Type: Article
Authors :
NameEmailORCID
Fobelets, KUNSPECIFIEDUNSPECIFIED
Ferguson, RUNSPECIFIEDUNSPECIFIED
Gaspari, VUNSPECIFIEDUNSPECIFIED
Velazquez, EUNSPECIFIEDUNSPECIFIED
Michelakis, Kk.michelakis@surrey.ac.ukUNSPECIFIED
Despotopoulos, SUNSPECIFIEDUNSPECIFIED
Zhang, JUNSPECIFIEDUNSPECIFIED
Papavassiliou, CUNSPECIFIEDUNSPECIFIED
Date : 1 January 2002
Identification Number : https://doi.org/10.1109/ESSDERC.2002.194991
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 13:29
Last Modified : 17 May 2017 15:11
URI: http://epubs.surrey.ac.uk/id/eprint/839407

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