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Characterization of shallow junction ion implantation profiles: Correlation between a noncontact photodisplacement thermal wave technique and rutherford backscattering analysis

Crean, GM, Jeynes, C, Somekh, MG and Webb, RP (1989) Characterization of shallow junction ion implantation profiles: Correlation between a noncontact photodisplacement thermal wave technique and rutherford backscattering analysis European Solid-State Device Research Conference. pp. 929-932.

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Abstract

© 1989 Springer-Verlag Heidelberg. © 1989 Springer-Verlag Bcrbn Heidelberg. All Rights Reserved.This paper correlates photodisplacement thermal wave characterization of ion implanted silicon wafers with the lattice information provided by Rutherford Backscattering Spectrometry.

Item Type: Article
Authors :
NameEmailORCID
Crean, GMUNSPECIFIEDUNSPECIFIED
Jeynes, Cc.jeynes@surrey.ac.ukUNSPECIFIED
Somekh, MGUNSPECIFIEDUNSPECIFIED
Webb, RPr.webb@surrey.ac.ukUNSPECIFIED
Date : 1 January 1989
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 13:29
Last Modified : 17 May 2017 15:11
URI: http://epubs.surrey.ac.uk/id/eprint/839406

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