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Electrical properties of Bi-implanted amorphous chalcogenide films

Fedorenko, YG, Hughes, MA, Colaux, JL, Jeynes, C, Gwilliam, RM, Homewood, K, Gholipour, B, Yao, J, Hewak, DW, Lee, T-H , Elliott, SR and Curry, RJ (2014) Electrical properties of Bi-implanted amorphous chalcogenide films

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The impact of Bi implantation on the conductivity and the thermopower of amorphous chalcogenide films is investigated. Incorporation of Bi in Ge-Sb-Te and GeTe results in enhanced conductivity. The negative Seebeck coefficient confirms onset of the electron conductivity in GeTe implanted with Bi at a dose of 2x1016 cm-2. The enhanced conductivity is accompanied by defect accumulation in the films upon implantation as is inferred by using analysis of the space-charge limited current. The results indicate that native coordination defects in lone-pair semiconductors can be deactivated by means of ion implantation, and higher conductivity of the films stems from additional electrically active defects created by implantation of bismuth.

Item Type: Article
Divisions : Surrey research (other units)
Authors :
Fedorenko, YG
Hughes, MA
Jeynes, C
Gwilliam, RM
Homewood, K
Gholipour, B
Yao, J
Hewak, DW
Lee, T-H
Elliott, SR
Curry, RJ
Date : 21 October 2014
Uncontrolled Keywords : cond-mat.mtrl-sci, cond-mat.mtrl-sci
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 13:29
Last Modified : 25 Jan 2020 00:00

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