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Ion Beam Analysis for Hall Scattering Factor Measurements in Antimony Implanted Bulk and Strained Silicon

Alzanki, T, Bennett, N, Gwilliam, R, Jeynes, C, Bailey, P, Noakes, T and Sealy, B (2014) Ion Beam Analysis for Hall Scattering Factor Measurements in Antimony Implanted Bulk and Strained Silicon JOURNAL OF ENGINEERING RESEARCH, 2 (1). pp. 121-132.

Full text not available from this repository.
Item Type: Article
Authors :
NameEmailORCID
Alzanki, TUNSPECIFIEDUNSPECIFIED
Bennett, NUNSPECIFIEDUNSPECIFIED
Gwilliam, Rr.gwilliam@surrey.ac.ukUNSPECIFIED
Jeynes, CUNSPECIFIEDUNSPECIFIED
Bailey, PUNSPECIFIEDUNSPECIFIED
Noakes, TUNSPECIFIEDUNSPECIFIED
Sealy, BUNSPECIFIEDUNSPECIFIED
Date : 1 March 2014
Uncontrolled Keywords : Science & Technology, Technology, Engineering, Multidisciplinary, Engineering, Rutherford backscattering, Medium Energy Ion Scattering, Hall scattering factor, Hall effect, rapid thermal annealing, antimony, bulk silicon, strained silicon, SI, JUNCTIONS, PROFILES, MOBILITY, DEFECTS, DOPANT
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 13:27
Last Modified : 17 May 2017 15:11
URI: http://epubs.surrey.ac.uk/id/eprint/839307

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