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Growth and characterisation of Ga(NAsSi) alloy by metal-organic vapour phase epitaxy

Bushell, ZL, Ludewig, P, Knaub, N, Batool, Z, Hild, K, Stolz, W, Sweeney, SJ and Volz, K (2014) Growth and characterisation of Ga(NAsSi) alloy by metal-organic vapour phase epitaxy JOURNAL OF CRYSTAL GROWTH, 396. pp. 79-84.

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Item Type: Article
Authors :
NameEmailORCID
Bushell, ZLUNSPECIFIEDUNSPECIFIED
Ludewig, PUNSPECIFIEDUNSPECIFIED
Knaub, NUNSPECIFIEDUNSPECIFIED
Batool, ZUNSPECIFIEDUNSPECIFIED
Hild, Kk.hild@surrey.ac.ukUNSPECIFIED
Stolz, WUNSPECIFIEDUNSPECIFIED
Sweeney, SJs.sweeney@surrey.ac.ukUNSPECIFIED
Volz, KUNSPECIFIEDUNSPECIFIED
Date : 15 June 2014
Identification Number : 10.1016/j.jcrysgro.2014.03.038
Uncontrolled Keywords : Science & Technology, Physical Sciences, Technology, Crystallography, Materials Science, Multidisciplinary, Physics, Applied, Materials Science, Physics, CRYSTALLOGRAPHY, MATERIALS SCIENCE, MULTIDISCIPLINARY, PHYSICS, APPLIED, Metal-organic vapour phase epitaxy, Bismuth compounds, GaNAsBi, Nitrides, Semiconducting III-V materials, Semiconducting quaternary alloys, MOLECULAR-BEAM EPITAXY, IMPROVED LUMINESCENCE EFFICIENCY, MODULATION SPECTROSCOPY, (GAIN)(NAS), SEMICONDUCTORS, GANASBI, ORIGIN
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 13:19
Last Modified : 17 May 2017 15:10
URI: http://epubs.surrey.ac.uk/id/eprint/838758

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