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Electrical observation of non-radiative recombination in Er doped Si nano-crystals during thermal quenching of intra-4f luminescence

Ishii, M, Crowe, IF, Halsall, MP, Knights, AP, Gwilliam, RM and Hamilton, B (2014) Electrical observation of non-radiative recombination in Er doped Si nano-crystals during thermal quenching of intra-4f luminescence JAPANESE JOURNAL OF APPLIED PHYSICS, 53 (3), ARTN 03130.

Full text not available from this repository.
Item Type: Article
Authors :
NameEmailORCID
Ishii, MUNSPECIFIEDUNSPECIFIED
Crowe, IFUNSPECIFIEDUNSPECIFIED
Halsall, MPUNSPECIFIEDUNSPECIFIED
Knights, APUNSPECIFIEDUNSPECIFIED
Gwilliam, RMr.gwilliam@surrey.ac.ukUNSPECIFIED
Hamilton, BUNSPECIFIEDUNSPECIFIED
Date : 1 March 2014
Identification Number : 10.7567/JJAP.53.031302
Uncontrolled Keywords : Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, NANOCRYSTALS, INP, PHOTOLUMINESCENCE, EMISSION, DYNAMICS, SILICON, FILMS, YB3+
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 13:18
Last Modified : 17 May 2017 15:10
URI: http://epubs.surrey.ac.uk/id/eprint/838690

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