Localization effects and band gap of GaAsBi alloys
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Mohmad, AR, Bastiman, F, Hunter, CJ, Richards, RD, Sweeney, SJ, Ng, JS, David, JPR and Majlis, BY (2014) Localization effects and band gap of GaAsBi alloys PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 251 (6). pp. 1276-1281.
Full text not available from this repository.| Item Type: | Article | |||||||||||||||||||||||||||
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| Date : | 1 June 2014 | |||||||||||||||||||||||||||
| DOI : | 10.1002/pssb.201350311 | |||||||||||||||||||||||||||
| Uncontrolled Keywords : | Science & Technology, Physical Sciences, Physics, Condensed Matter, Physics, band gap, GaAsBi, localization theory, photoluminescence, MOLECULAR-BEAM EPITAXY, SEMICONDUCTORS, GAAS1-XBIX, EMISSION, ORIGIN | |||||||||||||||||||||||||||
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| Depositing User : | Symplectic Elements | |||||||||||||||||||||||||||
| Date Deposited : | 17 May 2017 13:17 | |||||||||||||||||||||||||||
| Last Modified : | 16 Jan 2019 18:42 | |||||||||||||||||||||||||||
| URI: | http://epubs.surrey.ac.uk/id/eprint/838606 |
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