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Localization effects and band gap of GaAsBi alloys

Mohmad, AR, Bastiman, F, Hunter, CJ, Richards, RD, Sweeney, SJ, Ng, JS, David, JPR and Majlis, BY (2014) Localization effects and band gap of GaAsBi alloys PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 251 (6). pp. 1276-1281.

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Item Type: Article
Authors :
NameEmailORCID
Mohmad, ARUNSPECIFIEDUNSPECIFIED
Bastiman, FUNSPECIFIEDUNSPECIFIED
Hunter, CJUNSPECIFIEDUNSPECIFIED
Richards, RDUNSPECIFIEDUNSPECIFIED
Sweeney, SJs.sweeney@surrey.ac.ukUNSPECIFIED
Ng, JSUNSPECIFIEDUNSPECIFIED
David, JPRUNSPECIFIEDUNSPECIFIED
Majlis, BYUNSPECIFIEDUNSPECIFIED
Date : 1 June 2014
Identification Number : https://doi.org/10.1002/pssb.201350311
Uncontrolled Keywords : Science & Technology, Physical Sciences, Physics, Condensed Matter, Physics, band gap, GaAsBi, localization theory, photoluminescence, MOLECULAR-BEAM EPITAXY, SEMICONDUCTORS, GAAS1-XBIX, EMISSION, ORIGIN
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 13:17
Last Modified : 17 May 2017 15:10
URI: http://epubs.surrey.ac.uk/id/eprint/838606

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