Localization effects and band gap of GaAsBi alloys

Mohmad, AR, Bastiman, F, Hunter, CJ, Richards, RD, Sweeney, SJ, Ng, JS, David, JPR and Majlis, BY (2014) Localization effects and band gap of GaAsBi alloys PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 251 (6). pp. 1276-1281.

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Item Type:	Article
Authors :	Name Email ORCID Mohmad, AR UNSPECIFIED UNSPECIFIED Bastiman, F UNSPECIFIED UNSPECIFIED Hunter, CJ UNSPECIFIED UNSPECIFIED Richards, RD UNSPECIFIED UNSPECIFIED Sweeney, SJ s.sweeney@surrey.ac.uk UNSPECIFIED Ng, JS UNSPECIFIED UNSPECIFIED David, JPR UNSPECIFIED UNSPECIFIED Majlis, BY UNSPECIFIED UNSPECIFIED
Date :	1 June 2014
Identification Number :	https://doi.org/10.1002/pssb.201350311
Uncontrolled Keywords :	Science & Technology, Physical Sciences, Physics, Condensed Matter, Physics, band gap, GaAsBi, localization theory, photoluminescence, MOLECULAR-BEAM EPITAXY, SEMICONDUCTORS, GAAS1-XBIX, EMISSION, ORIGIN
Related URLs :	Author
Depositing User :	Symplectic Elements
Date Deposited :	17 May 2017 13:17
Last Modified :	17 May 2017 15:10
URI:	http://epubs.surrey.ac.uk/id/eprint/838606

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