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The use of deep-level dopants in silicon-on-insulator optical waveguide modulators

Logan, DF, Jessop, PE, Knights, AP and Gwilliam, RM (2009) The use of deep-level dopants in silicon-on-insulator optical waveguide modulators Optics InfoBase Conference Papers.

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Abstract

The dependence of silicon's absorption coefficient at λ = 1.55 μm on the charge state of deep levels is modeled and measured experimentally. Improved designs for p-i-n rib waveguide modulators based on this effect are presented. © 2009 Optical Society of America.

Item Type: Article
Authors :
NameEmailORCID
Logan, DFUNSPECIFIEDUNSPECIFIED
Jessop, PEUNSPECIFIEDUNSPECIFIED
Knights, APUNSPECIFIEDUNSPECIFIED
Gwilliam, RMr.gwilliam@surrey.ac.ukUNSPECIFIED
Date : 1 December 2009
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 13:15
Last Modified : 17 May 2017 15:10
URI: http://epubs.surrey.ac.uk/id/eprint/838505

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