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On the temperature dependence of monolithically integrated Ga(NAsP)/(BGa)P/Si QW lasers

Hossain, N, Jin, SR, Sweeney, SJ, Liebich, S, Ludewig, P, Zimprich, M, Kunert, B, Volz, K and Stolz, W (2010) On the temperature dependence of monolithically integrated Ga(NAsP)/(BGa)P/Si QW lasers Optics InfoBase Conference Papers.

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Abstract

Lasing operation up to 120K is reported in novel direct band-gap Ga(NAsP)/(BGa)P lasers grown monolithically on a silicon substrate. A carrier leakage process is found to dominate the temperature dependence of the laser threshold current. © 2010 OSA /FiO/LS 2010.

Item Type: Article
Authors :
NameEmailORCID
Hossain, NUNSPECIFIEDUNSPECIFIED
Jin, SRs.jin@surrey.ac.ukUNSPECIFIED
Sweeney, SJs.sweeney@surrey.ac.ukUNSPECIFIED
Liebich, SUNSPECIFIEDUNSPECIFIED
Ludewig, PUNSPECIFIEDUNSPECIFIED
Zimprich, MUNSPECIFIEDUNSPECIFIED
Kunert, BUNSPECIFIEDUNSPECIFIED
Volz, KUNSPECIFIEDUNSPECIFIED
Stolz, WUNSPECIFIEDUNSPECIFIED
Date : 1 December 2010
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 13:14
Last Modified : 17 May 2017 15:09
URI: http://epubs.surrey.ac.uk/id/eprint/838483

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