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Focussed ion beam etching of the interfacial region of lead zirconate titanate thin film after laser-release from sapphire fabrication substrate

Chakraborty, T, Xu, B, Harrington, J, Chakraborty, S, Zhang, Q, Miles, RE, Dorey, R and Milne, SJ (2006) Focussed ion beam etching of the interfacial region of lead zirconate titanate thin film after laser-release from sapphire fabrication substrate 2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings, 3. pp. 162-165.

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Abstract

Although many lead zirconate titanate (PZT) based MEMS have been demonstrated, the thermal incompatibility problems associated with in-situ fabrication of PZT films on the device substrate remain a major challenge. Process temperatures of 600-700 °C are common for PZT on silicon, however these temperatures can degrade silicon microelectronics and metal interconnects. By depositing the film on a separate fabrication substrate, such as sapphire, and then using a pulsed UV laser to aid its transfer to the device substrate the problems of thermal incompatibility are avoided [1]. In order to gain a better understanding of the effects of the laser radiation on the interfacial region of the film originally adjacent to the sapphire substrate, we are examining the merits of dual-beam SEM focussed-ion- beam etching (FIBSEM, Nova 200 Nanolab, FEI UK Ltd). Microstructural information from SEM, together with preliminary results using FIBSEM are presented.

Item Type: Article
Authors :
NameEmailORCID
Chakraborty, TUNSPECIFIEDUNSPECIFIED
Xu, BUNSPECIFIEDUNSPECIFIED
Harrington, JUNSPECIFIEDUNSPECIFIED
Chakraborty, SUNSPECIFIEDUNSPECIFIED
Zhang, QUNSPECIFIEDUNSPECIFIED
Miles, REUNSPECIFIEDUNSPECIFIED
Dorey, Rr.dorey@surrey.ac.ukUNSPECIFIED
Milne, SJUNSPECIFIEDUNSPECIFIED
Date : 8 December 2006
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 13:12
Last Modified : 17 May 2017 15:09
URI: http://epubs.surrey.ac.uk/id/eprint/838326

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