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High brightness ZnS and GaN electroluminescent devices using PZT thick dielectric layers

Munasinghe, C, Heikenfeld, J, Dorey, R, Whatmore, R, Bender, JP, Wager, JF and Steckl, AJ (2005) High brightness ZnS and GaN electroluminescent devices using PZT thick dielectric layers IEEE TRANSACTIONS ON ELECTRON DEVICES, 52 (2). pp. 194-203.

Full text not available from this repository.
Item Type: Article
Authors :
NameEmailORCID
Munasinghe, CUNSPECIFIEDUNSPECIFIED
Heikenfeld, JUNSPECIFIEDUNSPECIFIED
Dorey, Rr.dorey@surrey.ac.ukUNSPECIFIED
Whatmore, RUNSPECIFIEDUNSPECIFIED
Bender, JPUNSPECIFIEDUNSPECIFIED
Wager, JFUNSPECIFIEDUNSPECIFIED
Steckl, AJUNSPECIFIEDUNSPECIFIED
Date : 1 February 2005
Identification Number : 10.1109/TED.2004.842542
Uncontrolled Keywords : Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Physics, Applied, Engineering, Physics, ENGINEERING, ELECTRICAL & ELECTRONIC, PHYSICS, APPLIED, electrical characterization, electroluminescent device, GaN : RE, luminance, lead zirconate titanate (PZT), thick dielectric (TD), ZnS : Mn, DOPED GAN, FILM, EMISSION, FABRICATION, PHOSPHOR, GROWTH
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 13:11
Last Modified : 17 May 2017 15:09
URI: http://epubs.surrey.ac.uk/id/eprint/838268

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