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InGaAsBi alloys on InP for efficient near- and mid-infrared light emitting devices

Jin, S and Sweeney, SJ (2013) InGaAsBi alloys on InP for efficient near- and mid-infrared light emitting devices JOURNAL OF APPLIED PHYSICS, 114 (21), ARTN 21310.

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Item Type: Article
Authors :
NameEmailORCID
Jin, Ss.jin@surrey.ac.ukUNSPECIFIED
Sweeney, SJs.sweeney@surrey.ac.ukUNSPECIFIED
Date : 7 December 2013
Identification Number : 10.1063/1.4837615
Uncontrolled Keywords : Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, MOLECULAR-BEAM-EPITAXY, QUANTUM-WELL LASERS, BAND OFFSETS, MU-M, SEMICONDUCTORS
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 13:08
Last Modified : 17 May 2017 15:09
URI: http://epubs.surrey.ac.uk/id/eprint/838078

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