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Modelling the Auger Recombination rates of GaAs(1-x)Bi x alloys

Maspero, R, Sweeney, SJ and Florescu, M (2013) Modelling the Auger Recombination rates of GaAs(1-x)Bi x alloys 13th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2013. pp. 81-82.

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We calculate the Conduction, Heavy Hole (HH) - Split-off Hole (SO), HH (CHSH) Auger Recombination rates for GaAs(1-x)Bix alloys, which are candidates for highly efficient telecommunication devices. A ten-band, tight-binding method, including spin-orbit coupling, was performed on a 9×9×9 strained supercell in order to generate an accurate band structure to perform the calculation on. This band structure was then unfolded to give a true E-k relation. As predicted by experiment, there should be a decrease in the Auger recombination rate as the concentration of Bismuth increases ending in a suppression at greater than ∼11% Bismuth. © 2013 IEEE.

Item Type: Article
Divisions : Surrey research (other units)
Authors :
Maspero, R
Date : 23 December 2013
DOI : 10.1109/NUSOD.2013.6633134
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 13:08
Last Modified : 24 Jan 2020 23:29

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