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Direct observation of indium precipitates in silicon following high dose ion implantation

Dudeck, KJ, Huante-Ceron, E, Knights, AP, Gwilliam, RM and Botton, GA (2013) Direct observation of indium precipitates in silicon following high dose ion implantation SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 28 (12), ARTN 12501.

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Item Type: Article
Authors :
NameEmailORCID
Dudeck, KJUNSPECIFIEDUNSPECIFIED
Huante-Ceron, EUNSPECIFIEDUNSPECIFIED
Knights, APUNSPECIFIEDUNSPECIFIED
Gwilliam, RMr.gwilliam@surrey.ac.ukUNSPECIFIED
Botton, GAUNSPECIFIEDUNSPECIFIED
Date : 1 December 2013
Identification Number : 10.1088/0268-1242/28/12/125012
Uncontrolled Keywords : Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Materials Science, Multidisciplinary, Physics, Condensed Matter, Engineering, Materials Science, Physics, ENGINEERING, ELECTRICAL & ELECTRONIC, MATERIALS SCIENCE, MULTIDISCIPLINARY, PHYSICS, CONDENSED MATTER, SOLID-PHASE EPITAXY, DIFFUSION, REDISTRIBUTION, REGROWTH, DAMAGE, MODEL, SI
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 13:08
Last Modified : 17 May 2017 15:09
URI: http://epubs.surrey.ac.uk/id/eprint/838057

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