University of Surrey

Test tubes in the lab Research in the ATI Dance Research

The trivacancy and trivacancy-oxygen family of defects in silicon

Markevich, VP, Peaker, AR, Hamilton, B, Lastovskii, SB, Murin, LI, Coutinho, J, Rayson, MJ, Briddon, PR and Svensson, BG (2014) The trivacancy and trivacancy-oxygen family of defects in silicon Solid State Phenomena, 205-20. pp. 181-190.

Full text not available from this repository.


The data obtained recently from combined deep-level-transient spectroscopy (DLTS), local vibrational mode (LVM) spectroscopy and ab-initio modeling studies on structure, electronic properties, local vibrational modes, reconfiguration and diffusion paths and barriers for trivacancy (V3) and trivacancy-oxygen (V3O) defects in silicon are summarized. New experimental results on the introduction rates of the divacancy (V2) and trivacancy upon 4 MeV electron irradiation and on the transformation of V3 from the fourfold coordinated configuration to the (110) planar one upon minority carrier injection are reported. Possible mechanisms of the transformation are considered and discussed. © (2014) Trans Tech Publications, Switzerland.

Item Type: Article
Divisions : Surrey research (other units)
Authors :
Markevich, VP
Peaker, AR
Hamilton, B
Lastovskii, SB
Murin, LI
Coutinho, J
Briddon, PR
Svensson, BG
Date : 1 January 2014
DOI : 10.4028/
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 13:07
Last Modified : 24 Jan 2020 23:27

Actions (login required)

View Item View Item


Downloads per month over past year

Information about this web site

© The University of Surrey, Guildford, Surrey, GU2 7XH, United Kingdom.
+44 (0)1483 300800