The trivacancy and trivacancy-oxygen family of defects in silicon

Markevich, VP, Peaker, AR, Hamilton, B, Lastovskii, SB, Murin, LI, Coutinho, J, Rayson, MJ, Briddon, PR and Svensson, BG (2014) The trivacancy and trivacancy-oxygen family of defects in silicon Solid State Phenomena, 205-20. pp. 181-190.

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Abstract

The data obtained recently from combined deep-level-transient spectroscopy (DLTS), local vibrational mode (LVM) spectroscopy and ab-initio modeling studies on structure, electronic properties, local vibrational modes, reconfiguration and diffusion paths and barriers for trivacancy (V3) and trivacancy-oxygen (V3O) defects in silicon are summarized. New experimental results on the introduction rates of the divacancy (V2) and trivacancy upon 4 MeV electron irradiation and on the transformation of V3 from the fourfold coordinated configuration to the (110) planar one upon minority carrier injection are reported. Possible mechanisms of the transformation are considered and discussed. © (2014) Trans Tech Publications, Switzerland.

Item Type:	Article
Divisions :	Surrey research (other units)
Authors :	Name Email ORCID Markevich, VP Peaker, AR Hamilton, B Lastovskii, SB Murin, LI Coutinho, J Rayson, MJ m.j.rayson@surrey.ac.uk Briddon, PR Svensson, BG
Date :	1 January 2014
DOI :	10.4028/www.scientific.net/SSP.205-206.181
Depositing User :	Symplectic Elements
Date Deposited :	17 May 2017 13:07
Last Modified :	24 Jan 2020 23:27
URI:	http://epubs.surrey.ac.uk/id/eprint/838027

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