University of Surrey

Test tubes in the lab Research in the ATI Dance Research

Trapping of diffusing germanium by silicon excess co-implanted into fused silica

Barba, D, Demarche, J, Martin, F, Terwagne, G and Ross, GG (2012) Trapping of diffusing germanium by silicon excess co-implanted into fused silica Applied Physics Letters, 101 (14).

Full text not available from this repository.

Abstract

The trapping of germanium by silicon atoms, successively implanted into fused silica, is evidenced after thermal annealing at 1150 ° C. Rutherford backscattering spectroscopy and Raman measurements reveal a linear increase of remaining Ge concentration with the co-implanted Si fluence, accompanied by an increase of the Ge-Ge bond density, respectively. Comparison of Ge concentration profiles with scanning electron microscopy images shows the formation of nanoclusters, resulting from the accumulation of Ge within the region containing a greater concentration of co-implanted Si, whereas nanocavities, indicative of Ge release from nanostructures, are dominant in deeper sample region of lower Si excess concentration. © 2012 American Institute of Physics.

Item Type: Article
Authors :
NameEmailORCID
Barba, DUNSPECIFIEDUNSPECIFIED
Demarche, Jj.demarche@surrey.ac.ukUNSPECIFIED
Martin, FUNSPECIFIEDUNSPECIFIED
Terwagne, GUNSPECIFIEDUNSPECIFIED
Ross, GGUNSPECIFIEDUNSPECIFIED
Date : 1 October 2012
Identification Number : 10.1063/1.4757291
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 13:05
Last Modified : 17 May 2017 15:08
URI: http://epubs.surrey.ac.uk/id/eprint/837903

Actions (login required)

View Item View Item

Downloads

Downloads per month over past year


Information about this web site

© The University of Surrey, Guildford, Surrey, GU2 7XH, United Kingdom.
+44 (0)1483 300800