Tin-vacancy complex in germanium

Markevich, VP, Peaker, AR, Hamilton, B, Litvinov, VV, Pokotilo, YM, Lastovskii, SB, Coutinho, J, Carvalho, A, Rayson, MJ and Briddon, PR (2011) Tin-vacancy complex in germanium Journal of Applied Physics, 109 (8).

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Abstract

Electrically active defects introduced into Ge crystals co-doped with tin and phosphorus atoms by irradiation with 6 MeV electrons have been studied by means of transient capacitance techniques and ab-initio density functional modeling. It is shown that Sn atoms are effective traps for vacancies (V) in the irradiated Ge:Sn+P crystals. The electronic structure of Sn-V is unraveled on the basis of hybrid states from a Sn atom and a divacancy. Unlike the case for Si, Sn-V in Ge is not a donor. A hole trap with 0.19 eV activation energy for hole emission to the valence band is assigned to an acceptor level of the Sn-V complex. The Sn-V complex anneals out upon heat-treatments in the temperature range 50-100 °C. Its disappearance is accompanied by the formation of phosphorus-vacancy centers. © 2011 American Institute of Physics.

Item Type:	Article
Divisions :	Surrey research (other units)
Authors :	Name Email ORCID Markevich, VP Peaker, AR Hamilton, B Litvinov, VV Pokotilo, YM Lastovskii, SB Coutinho, J Carvalho, A Rayson, MJ m.j.rayson@surrey.ac.uk Briddon, PR
Date :	15 April 2011
DOI :	10.1063/1.3574405
Depositing User :	Symplectic Elements
Date Deposited :	17 May 2017 13:04
Last Modified :	24 Jan 2020 23:22
URI:	http://epubs.surrey.ac.uk/id/eprint/837789

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