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Tin-vacancy complex in germanium

Markevich, VP, Peaker, AR, Hamilton, B, Litvinov, VV, Pokotilo, YM, Lastovskii, SB, Coutinho, J, Carvalho, A, Rayson, MJ and Briddon, PR (2011) Tin-vacancy complex in germanium Journal of Applied Physics, 109 (8).

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Electrically active defects introduced into Ge crystals co-doped with tin and phosphorus atoms by irradiation with 6 MeV electrons have been studied by means of transient capacitance techniques and ab-initio density functional modeling. It is shown that Sn atoms are effective traps for vacancies (V) in the irradiated Ge:Sn+P crystals. The electronic structure of Sn-V is unraveled on the basis of hybrid states from a Sn atom and a divacancy. Unlike the case for Si, Sn-V in Ge is not a donor. A hole trap with 0.19 eV activation energy for hole emission to the valence band is assigned to an acceptor level of the Sn-V complex. The Sn-V complex anneals out upon heat-treatments in the temperature range 50-100 °C. Its disappearance is accompanied by the formation of phosphorus-vacancy centers. © 2011 American Institute of Physics.

Item Type: Article
Divisions : Surrey research (other units)
Authors :
Markevich, VP
Peaker, AR
Hamilton, B
Litvinov, VV
Pokotilo, YM
Lastovskii, SB
Coutinho, J
Carvalho, A
Briddon, PR
Date : 15 April 2011
DOI : 10.1063/1.3574405
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 13:04
Last Modified : 24 Jan 2020 23:22

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