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Radiation-induced defect reactions in tin-doped Ge crystals

Markevich, VP, Peaker, AR, Hamilton, B, Litvinov, VV, Pokotilo, YM, Petukh, AN, Lastovskii, SB, Coutinho, J, Rayson, MJ and Briddon, PR (2011) Radiation-induced defect reactions in tin-doped Ge crystals Solid State Phenomena, 178-17. pp. 392-397.

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Abstract

We have recently shown that Sn impurity atoms are effective traps for vacancies (V) in Ge:Sn crystals irradiated with MeV electrons at room temperature [V.P. Markevich etal., J. Appl. Phys. 109 (2011) 083705]. A hole trap with 0.19 eV activation energy for hole emission to the valence band (Eh) has been assigned to an acceptor level of the Sn-V complex. In the present work electrically active defects introduced into Ge:Sn+P crystals by irradiation with 6 MeV electrons and subsequent isochronal annealing in the temperature range 50-300 °C have been studied by means of transient capacitance techniques and ab-initio density functional modeling. It is found that the Sn-V complex anneals out upon heat-treatments in the temperature range 50-100 °C. Its disappearance is accompanied by the formation of vacancy-phosphorus (VP) centers. The disappearance of the VP defect upon thermal annealing in irradiated Sn-doped Ge crystals is accompanied by the effective formation of a defect which gives rise to a hole trap with Eh = 0.21 eV and is more thermally stable than other secondary radiation-induced defects in Ge:P samples. This defect is identified as tinvacancy- phosphorus (SnVP) complex. It is suggested that the effective interaction of the VP centers with tin atoms and high thermal stability of the SnVP complex can result in suppression of transient enhanced diffusion of phosphorus atoms in Ge. © (2011) Trans Tech Publications, Switzerland.

Item Type: Article
Authors :
NameEmailORCID
Markevich, VPUNSPECIFIEDUNSPECIFIED
Peaker, ARUNSPECIFIEDUNSPECIFIED
Hamilton, BUNSPECIFIEDUNSPECIFIED
Litvinov, VVUNSPECIFIEDUNSPECIFIED
Pokotilo, YMUNSPECIFIEDUNSPECIFIED
Petukh, ANUNSPECIFIEDUNSPECIFIED
Lastovskii, SBUNSPECIFIEDUNSPECIFIED
Coutinho, JUNSPECIFIEDUNSPECIFIED
Rayson, MJm.j.rayson@surrey.ac.ukUNSPECIFIED
Briddon, PRUNSPECIFIEDUNSPECIFIED
Date : 1 January 2011
Identification Number : https://doi.org/10.4028/www.scientific.net/SSP.178-179.392
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 13:03
Last Modified : 17 May 2017 13:04
URI: http://epubs.surrey.ac.uk/id/eprint/837787

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