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Electrical activity of multivacancy defects in silicon

Santos, P, Coutinho, J, Rayson, MJ and Briddon, PR (2012) Electrical activity of multivacancy defects in silicon Physica Status Solidi (C) Current Topics in Solid State Physics, 9 (10-11). pp. 2000-2004.

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Abstract

The formation processes and properties of multivacancy defects in Si have been recently the subject of several re-search studies. Here we report on density functional calculations concerning the stability and electrical activity of the tetravacancy, pentavacancy and hexavacancy complexes in Si. Formation energy calculations indicate that Four-Fold Coordinated (FFC) V 4 and V 5 are more stable than Part-of-Hexagonal-Ring (PHR) or planar structures by at least 1.2 eV and 0.6 eV, respectively. This relative stability order between configurations remains unchanged for different charged states from double plus to double minus. Calculations of the electrical activity predict deep acceptor levels for the FFC defects. Accordingly, electron traps related to (-/0) and (=/-) levels near E c - 0.5 eV were found for V4 and V5, whereas levels for V6 were estimated at E c - 0.35 eV. No donor levels were found for these defects. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Item Type: Article
Authors :
NameEmailORCID
Santos, PUNSPECIFIEDUNSPECIFIED
Coutinho, JUNSPECIFIEDUNSPECIFIED
Rayson, MJm.j.rayson@surrey.ac.ukUNSPECIFIED
Briddon, PRUNSPECIFIEDUNSPECIFIED
Date : 1 October 2012
Identification Number : https://doi.org/10.1002/pssc.201200063
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 13:03
Last Modified : 17 May 2017 13:03
URI: http://epubs.surrey.ac.uk/id/eprint/837777

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