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Increased electronic coupling in silicon nanocrystal networks doped with F4-TCNQ.

Carvalho, A, Oberg, S, Rayson, MJ and Briddon, PR (2013) Increased electronic coupling in silicon nanocrystal networks doped with F4-TCNQ. J Nanosci Nanotechnol, 13 (2). pp. 1035-1038.

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Abstract

The modification of the electronic structure of silicon nanocrystals using an organic dopant, 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ), is investigated using first-principles calculations. It is shown that physisorbed F4-TCNQ molecules have the effect of oxidizing the nanocrystal, attracting the charge density towards the F4-TCNQ-nanocrystal interface, and decreasing the excitation energy of the system. In periodic F4-TCNQ/nanocrystal superlattices, F4-TCNQ is suggested to enhance exciton separation, and in the presence of free holes, to serve as a bridge for electron/hole transfer between adjacent nanocrystals.

Item Type: Article
Authors :
NameEmailORCID
Carvalho, AUNSPECIFIEDUNSPECIFIED
Oberg, SUNSPECIFIEDUNSPECIFIED
Rayson, MJm.j.rayson@surrey.ac.ukUNSPECIFIED
Briddon, PRUNSPECIFIEDUNSPECIFIED
Date : February 2013
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 13:03
Last Modified : 17 May 2017 13:03
URI: http://epubs.surrey.ac.uk/id/eprint/837744

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