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A Study of Intersubband Absorption for Wavelength <= 6 um in Strain-compensated AlInAs/AlAs/InGaAs Multiple-quantum Wells

Lai, KT (2004) A Study of Intersubband Absorption for Wavelength <= 6 um in Strain-compensated AlInAs/AlAs/InGaAs Multiple-quantum Wells In: 6th International Conference on Mid-Infrared Optoelectronic Materials & Devices, 2004-06-28 - 2004-07-01, St. Petersburg, Russia.

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Item Type: Conference or Workshop Item (UNSPECIFIED)
Authors :
NameEmailORCID
Lai, KTk.lai@surrey.ac.ukUNSPECIFIED
Date : 28 June 2004
Uncontrolled Keywords : III-V Semiconductors, Multiple Quantum Wells, Intersubband Transitions, Strain-compensated, Double-barrier
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 13:03
Last Modified : 17 May 2017 15:08
URI: http://epubs.surrey.ac.uk/id/eprint/837732

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