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Highly-strained and Strain-compensated InGaAs-AlAs-InAlAs QWIPs

Lai, KT (2005) Highly-strained and Strain-compensated InGaAs-AlAs-InAlAs QWIPs In: 7th International Conference on Mid-Infrared Optoelectronic Materials & Devices, 2005-09-12 - 2005-09-14, Lancaster University, UK.

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Item Type: Conference or Workshop Item (UNSPECIFIED)
Authors :
NameEmailORCID
Lai, KTk.lai@surrey.ac.ukUNSPECIFIED
Date : 12 September 2005
Uncontrolled Keywords : III-V Semiconductors, Strain-compensated, MBE, QWIPs, Intersubband Transitions
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 13:03
Last Modified : 17 May 2017 15:08
URI: http://epubs.surrey.ac.uk/id/eprint/837731

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