Highly-strained and Strain-compensated InGaAs-AlAs-InAlAs QWIPs
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Lai, KT (2005) Highly-strained and Strain-compensated InGaAs-AlAs-InAlAs QWIPs In: 7th International Conference on Mid-Infrared Optoelectronic Materials & Devices, 2005-09-12 - 2005-09-14, Lancaster University, UK.
Full text not available from this repository.Item Type: | Conference or Workshop Item (UNSPECIFIED) | ||||||
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Divisions : | Surrey research (other units) | ||||||
Authors : |
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Date : | 12 September 2005 | ||||||
Uncontrolled Keywords : | III-V Semiconductors, Strain-compensated, MBE, QWIPs, Intersubband Transitions | ||||||
Depositing User : | Symplectic Elements | ||||||
Date Deposited : | 17 May 2017 13:03 | ||||||
Last Modified : | 23 Jan 2020 18:16 | ||||||
URI: | http://epubs.surrey.ac.uk/id/eprint/837731 |
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