Highly-strained and Strain-compensated InGaAs-AlAs-InAlAs QWIPs

Lai, KT (2005) Highly-strained and Strain-compensated InGaAs-AlAs-InAlAs QWIPs In: 7th International Conference on Mid-Infrared Optoelectronic Materials & Devices, 2005-09-12 - 2005-09-14, Lancaster University, UK.

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Item Type:	Conference or Workshop Item (UNSPECIFIED)
Authors :	Name Email ORCID Lai, KT k.lai@surrey.ac.uk
Date :	12 September 2005
Uncontrolled Keywords :	III-V Semiconductors, Strain-compensated, MBE, QWIPs, Intersubband Transitions
Depositing User :	Symplectic Elements
Date Deposited :	17 May 2017 13:03
Last Modified :	16 Jan 2019 18:39
URI:	http://epubs.surrey.ac.uk/id/eprint/837731

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