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InGaAs-AlAs-InAlAs 2-3µm QWIPs operating at zero bias up to 270 K and in photoconductive mode up to 300K

Lai, KT (2006) InGaAs-AlAs-InAlAs 2-3µm QWIPs operating at zero bias up to 270 K and in photoconductive mode up to 300K In: 15th European Workshop on Heterostructure Technology, 2006-10-01 - 2006-10-04, Manchester University, UK.

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Item Type: Conference or Workshop Item (UNSPECIFIED)
Authors :
NameEmailORCID
Lai, KTk.lai@surrey.ac.ukUNSPECIFIED
Date : 1 October 2006
Uncontrolled Keywords : QWIPs, strain-compensated, III-V semiconductors, Photoconductive, photovoltaic, near infrared
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 13:01
Last Modified : 17 May 2017 15:07
URI: http://epubs.surrey.ac.uk/id/eprint/837624

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