Intersubband Absorption from 2–7 μm using Strain‐compensated Double‐barrier InGaAs Multiquantum Wells

Lai, KT (2005) Intersubband Absorption from 2–7 μm using Strain‐compensated Double‐barrier InGaAs Multiquantum Wells In: PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27, 2004-07-26 - 2004-07-30, Flagstaff, Arizona (USA).

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Item Type:	Conference or Workshop Item (UNSPECIFIED)
Authors :	Name Email ORCID Lai, KT k.lai@surrey.ac.uk UNSPECIFIED
Date :	30 June 2005
Identification Number :	https://doi.org/10.1063/1.1994510
Contributors :	Contribution Name Email ORCID publisher American Institute of Physics, UNSPECIFIED UNSPECIFIED
Uncontrolled Keywords :	Quantum Wells, Intersubband transitions, Strain-compensated, III-V semiconductors
Related URLs :	Publisher
Depositing User :	Symplectic Elements
Date Deposited :	17 May 2017 13:00
Last Modified :	17 May 2017 15:07
URI:	http://epubs.surrey.ac.uk/id/eprint/837561

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