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Intersubband Absorption from 2–7 μm using Strain‐compensated Double‐barrier InGaAs Multiquantum Wells

Lai, KT (2005) Intersubband Absorption from 2–7 μm using Strain‐compensated Double‐barrier InGaAs Multiquantum Wells In: PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27, 2004-07-26 - 2004-07-30, Flagstaff, Arizona (USA).

Full text not available from this repository.
Item Type: Conference or Workshop Item (UNSPECIFIED)
Authors :
NameEmailORCID
Lai, KTk.lai@surrey.ac.ukUNSPECIFIED
Date : 30 June 2005
Identification Number : 10.1063/1.1994510
Contributors :
ContributionNameEmailORCID
publisherAmerican Institute of Physics, UNSPECIFIEDUNSPECIFIED
Uncontrolled Keywords : Quantum Wells, Intersubband transitions, Strain-compensated, III-V semiconductors
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 13:00
Last Modified : 17 May 2017 15:07
URI: http://epubs.surrey.ac.uk/id/eprint/837561

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