Intersubband Absorption from 2–7 μm using Strain‐compensated Double‐barrier InGaAs Multiquantum Wells
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Lai, KT (2005) Intersubband Absorption from 2–7 μm using Strain‐compensated Double‐barrier InGaAs Multiquantum Wells In: PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27, 2004-07-26 - 2004-07-30, Flagstaff, Arizona (USA).
Full text not available from this repository.Item Type: | Conference or Workshop Item (UNSPECIFIED) | ||||||||
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Divisions : | Surrey research (other units) | ||||||||
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Date : | 30 June 2005 | ||||||||
DOI : | 10.1063/1.1994510 | ||||||||
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Uncontrolled Keywords : | Quantum Wells, Intersubband transitions, Strain-compensated, III-V semiconductors | ||||||||
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Depositing User : | Symplectic Elements | ||||||||
Date Deposited : | 17 May 2017 13:00 | ||||||||
Last Modified : | 23 Jan 2020 18:15 | ||||||||
URI: | http://epubs.surrey.ac.uk/id/eprint/837561 |
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