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Highly strained In(x)Ga(1−x)As−In(y)Al(1−y)As (x>0:8; y<0:3) layers for short wavelength QWIP and QCL structures grown by MBE

Lai, KT (2004) Highly strained In(x)Ga(1−x)As−In(y)Al(1−y)As (x>0:8; y<0:3) layers for short wavelength QWIP and QCL structures grown by MBE Physica E: Low-Dimensional Systems and Nanostructures, 20 (3-4). pp. 496-502.

Full text not available from this repository.
Item Type: Article
Authors :
NameEmailORCID
Lai, KTk.lai@surrey.ac.ukUNSPECIFIED
Date : January 2004
Identification Number : 10.1016/j.physe.2003.08.066
Uncontrolled Keywords : QWIPs, QCL, strain-compensated, MBE, III-V semiconductors
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:58
Last Modified : 17 May 2017 15:07
URI: http://epubs.surrey.ac.uk/id/eprint/837427

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