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Near room temperature operation of a highly strained short wavelength (2.1 μm) AlAs/In(0.84)Ga(0.16)As/AlAs/InAlAs QWIP

Lai, KT (2006) Near room temperature operation of a highly strained short wavelength (2.1 μm) AlAs/In(0.84)Ga(0.16)As/AlAs/InAlAs QWIP Semiconductor Science and Technology, 21 (6). pp. 813-817.

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Item Type: Article
Authors :
NameEmailORCID
Lai, KTk.lai@surrey.ac.ukUNSPECIFIED
Date : 5 May 2006
Identification Number : 10.1088/0268-1242/21/6/019
Uncontrolled Keywords : strain-compensated, quantum well infrared photodetector, III-V semiconductors, short wavelength, Near room temperature
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:58
Last Modified : 17 May 2017 15:07
URI: http://epubs.surrey.ac.uk/id/eprint/837420

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