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Intersubband absorption from 2 to 7 μm in strain-compensated double-barrier In(x)Ga(1−x)As multiquantum wells

Lai, KT (2004) Intersubband absorption from 2 to 7 μm in strain-compensated double-barrier In(x)Ga(1−x)As multiquantum wells Semiconductor Science and Technology, 19 (11). pp. 1263-1267.

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Item Type: Article
Authors :
NameEmailORCID
Lai, KTk.lai@surrey.ac.ukUNSPECIFIED
Date : 16 September 2004
Identification Number : 10.1088/0268-1242/19/11/009
Uncontrolled Keywords : Intersubband absorption, strain-compensated, multiquantum wells, III-V semiconductors
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:58
Last Modified : 17 May 2017 15:07
URI: http://epubs.surrey.ac.uk/id/eprint/837418

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