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Intersubband absorption in strain-compensated InAlAs/AlAs/InxGa(1−x)As (x∼0.8) quantum wells grown on InP

Lai, KT (2003) Intersubband absorption in strain-compensated InAlAs/AlAs/InxGa(1−x)As (x∼0.8) quantum wells grown on InP JOURNAL OF APPLIED PHYSICS, 93 (10). pp. 6065-6067.

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Item Type: Article
Authors :
NameEmailORCID
Lai, KTk.lai@surrey.ac.ukUNSPECIFIED
Date : 15 May 2003
Identification Number : https://doi.org/10.1063/1.1565688
Uncontrolled Keywords : Intersubband, strain-compensated, III-V and II-VI semiconductors, Quantum wells
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:58
Last Modified : 17 May 2017 15:07
URI: http://epubs.surrey.ac.uk/id/eprint/837415

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