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Photovoltaic operation up to 270 K of a strain-compensated AlAs/ In0.84Ga0.16As/AlAs/InAlAs quantum well infrared photodetector

Lai, KT (2005) Photovoltaic operation up to 270 K of a strain-compensated AlAs/ In0.84Ga0.16As/AlAs/InAlAs quantum well infrared photodetector Applied Physics Letters, 87 (19). 192113 - 192113-3.

Full text not available from this repository.
Item Type: Article
Authors :
NameEmailORCID
Lai, KTk.lai@surrey.ac.ukUNSPECIFIED
Date : 4 November 2005
Identification Number : https://doi.org/10.1063/1.2130379
Uncontrolled Keywords : QWIPs, Strain compensated, Photovoltaic
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:57
Last Modified : 17 May 2017 15:07
URI: http://epubs.surrey.ac.uk/id/eprint/837412

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