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Nonvolatile memory from single-walled carbon nanotube-based field effect transistors

Wang, SG, Sellin, PJ, Zhang, Q and Yang, DJJ (2005) Nonvolatile memory from single-walled carbon nanotube-based field effect transistors CURRENT NANOSCIENCE, 1 (1). pp. 43-46.

Full text not available from this repository.
Item Type: Article
Authors :
NameEmailORCID
Wang, SGUNSPECIFIEDUNSPECIFIED
Sellin, PJp.sellin@surrey.ac.ukUNSPECIFIED
Zhang, QUNSPECIFIEDUNSPECIFIED
Yang, DJJUNSPECIFIEDUNSPECIFIED
Date : 1 January 2005
Identification Number : https://doi.org/10.2174/1573413052953147
Uncontrolled Keywords : Science & Technology, Life Sciences & Biomedicine, Technology, Biotechnology & Applied Microbiology, Nanoscience & Nanotechnology, Materials Science, Multidisciplinary, Science & Technology - Other Topics, Materials Science, BIOTECHNOLOGY & APPLIED MICROBIOLOGY, MATERIALS SCIENCE, MULTIDISCIPLINARY, NANOSCIENCE & NANOTECHNOLOGY, SENSORS
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:55
Last Modified : 17 May 2017 15:07
URI: http://epubs.surrey.ac.uk/id/eprint/837283

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