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X-ray detector with thick epitaxial GaAs grown by chemical reaction

Sun, GC, Lenoir, M, Breelle, E, Samic, H, Bourgoin, JC, El-Abbassi, H, Sellin, PJ and Montagne, JP (2003) X-ray detector with thick epitaxial GaAs grown by chemical reaction In: Nuclear Science Symposium (NSS)/Symposium on Nuclear Power Systems (SNPS), 2002-11-10 - 2002-11-16, NORFOLK, VIRGINIA.

Full text not available from this repository.
Item Type: Conference or Workshop Item (UNSPECIFIED)
Authors :
NameEmailORCID
Sun, GCUNSPECIFIEDUNSPECIFIED
Lenoir, MUNSPECIFIEDUNSPECIFIED
Breelle, EUNSPECIFIEDUNSPECIFIED
Samic, HUNSPECIFIEDUNSPECIFIED
Bourgoin, JCUNSPECIFIEDUNSPECIFIED
El-Abbassi, HUNSPECIFIEDUNSPECIFIED
Sellin, PJp.sellin@surrey.ac.ukUNSPECIFIED
Montagne, JPUNSPECIFIEDUNSPECIFIED
Date : 1 August 2003
Identification Number : 10.1109/TNS.2003.815349
Contributors :
ContributionNameEmailORCID
publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, UNSPECIFIEDUNSPECIFIED
Uncontrolled Keywords : Science & Technology, Technology, Engineering, Electrical & Electronic, Nuclear Science & Technology, Engineering, ENGINEERING, ELECTRICAL & ELECTRONIC, NUCLEAR SCIENCE & TECHNOLOGY, epitaxy, GaAs, X-ray detector, GALLIUM-ARSENIDE, N-GAAS
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:55
Last Modified : 17 May 2017 15:07
URI: http://epubs.surrey.ac.uk/id/eprint/837275

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