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Design and characterisation of high electron mobility transistors for use in a monolithic GaAs X-ray imaging sensor

Boardman, DA and Sellin, PJ (2001) Design and characterisation of high electron mobility transistors for use in a monolithic GaAs X-ray imaging sensor In: 2nd International Workshop on Radiation Imaging Detectors, 2000-07-02 - 2000-07-06, FREIBURG, GERMANY.

Full text not available from this repository.
Item Type: Conference or Workshop Item (UNSPECIFIED)
Authors :
NameEmailORCID
Boardman, DAUNSPECIFIEDUNSPECIFIED
Sellin, PJp.sellin@surrey.ac.ukUNSPECIFIED
Date : 21 June 2001
Identification Number : https://doi.org/10.1016/S0168-9002(01)00849-X
Contributors :
ContributionNameEmailORCID
publisherELSEVIER SCIENCE BV, UNSPECIFIEDUNSPECIFIED
Uncontrolled Keywords : Science & Technology, Technology, Physical Sciences, Instruments & Instrumentation, Nuclear Science & Technology, Physics, Particles & Fields, Spectroscopy, Physics, INSTRUMENTS & INSTRUMENTATION, NUCLEAR SCIENCE & TECHNOLOGY, PHYSICS, PARTICLES & FIELDS, SPECTROSCOPY, HEMT, GaAs, monolithic pixel detector
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:55
Last Modified : 17 May 2017 15:07
URI: http://epubs.surrey.ac.uk/id/eprint/837272

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