Design and characterisation of high electron mobility transistors for use in a monolithic GaAs X-ray imaging sensor

Boardman, DA and Sellin, PJ (2001) Design and characterisation of high electron mobility transistors for use in a monolithic GaAs X-ray imaging sensor In: 2nd International Workshop on Radiation Imaging Detectors, 2000-07-02 - 2000-07-06, FREIBURG, GERMANY.

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Item Type:	Conference or Workshop Item (UNSPECIFIED)
Authors :	Name Email ORCID Boardman, DA Sellin, PJ p.sellin@surrey.ac.uk
Date :	21 June 2001
DOI :	10.1016/S0168-9002(01)00849-X
Contributors :	Contribution Name Email ORCID publisher ELSEVIER SCIENCE BV,
Uncontrolled Keywords :	Science & Technology, Technology, Physical Sciences, Instruments & Instrumentation, Nuclear Science & Technology, Physics, Particles & Fields, Spectroscopy, Physics, INSTRUMENTS & INSTRUMENTATION, NUCLEAR SCIENCE & TECHNOLOGY, PHYSICS, PARTICLES & FIELDS, SPECTROSCOPY, HEMT, GaAs, monolithic pixel detector
Related URLs :	Author
Depositing User :	Symplectic Elements
Date Deposited :	17 May 2017 12:55
Last Modified :	16 Jan 2019 18:38
URI:	http://epubs.surrey.ac.uk/id/eprint/837272

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