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Characterization of thick epitaxial GaAs layers for X-ray detection

Samic, H, Sun, GC, Donchev, V, Nghia, NX, Gandouzi, M, Zazoui, M, Bourgoin, JC, El-Abbassi, H, Rath, S and Sellin, PJ (2002) Characterization of thick epitaxial GaAs layers for X-ray detection In: 3rd International Workshop on Radiation Imaging Detectors, 2001-09-23 - 2001-09-27, OROSEI, ITALY.

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Item Type: Conference or Workshop Item (UNSPECIFIED)
Authors :
NameEmailORCID
Samic, HUNSPECIFIEDUNSPECIFIED
Sun, GCUNSPECIFIEDUNSPECIFIED
Donchev, VUNSPECIFIEDUNSPECIFIED
Nghia, NXUNSPECIFIEDUNSPECIFIED
Gandouzi, MUNSPECIFIEDUNSPECIFIED
Zazoui, MUNSPECIFIEDUNSPECIFIED
Bourgoin, JCUNSPECIFIEDUNSPECIFIED
El-Abbassi, HUNSPECIFIEDUNSPECIFIED
Rath, SUNSPECIFIEDUNSPECIFIED
Sellin, PJp.sellin@surrey.ac.ukUNSPECIFIED
Date : 11 July 2002
Identification Number : https://doi.org/10.1016/S0168-9002(02)00953-1
Contributors :
ContributionNameEmailORCID
publisherELSEVIER SCIENCE BV, UNSPECIFIEDUNSPECIFIED
Uncontrolled Keywords : Science & Technology, Technology, Physical Sciences, Instruments & Instrumentation, Nuclear Science & Technology, Physics, Particles & Fields, Spectroscopy, Physics, INSTRUMENTS & INSTRUMENTATION, NUCLEAR SCIENCE & TECHNOLOGY, PHYSICS, PARTICLES & FIELDS, SPECTROSCOPY, GaAs, epitxial layer, pin structure, X-ray detector, MECHANISM
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:55
Last Modified : 17 May 2017 15:07
URI: http://epubs.surrey.ac.uk/id/eprint/837262

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