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A reassessment of intervalence band absorption in 1.6μm (GaIn)(AsP)/InP

Adams, AR, Heasman, KC and Hilton, J (1987) A reassessment of intervalence band absorption in 1.6μm (GaIn)(AsP)/InP Semiconductor Science and Technology, 2 (12). pp. 761-764.

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Abstract

In the paper the authors re-evaluate the influence of intervalence band absorption on the temperature sensitivity of 1.6 mu m (GaIn)(AsP)/InP lasers and emphasise its general importance in semiconductor lasers operating at several times their threshold current.

Item Type: Article
Authors :
NameEmailORCID
Adams, ARUNSPECIFIEDUNSPECIFIED
Heasman, KCk.heasman@surrey.ac.ukUNSPECIFIED
Hilton, JUNSPECIFIEDUNSPECIFIED
Date : 1 December 1987
Identification Number : https://doi.org/10.1088/0268-1242/2/12/001
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:48
Last Modified : 17 May 2017 15:06
URI: http://epubs.surrey.ac.uk/id/eprint/836810

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