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Field-effect transistor based on ZnO nanorods with a variable threshold cutoff voltage

Gruzintsev, AN, Redkin, AN, Opoku, C and Shkunov, MN (2013) Field-effect transistor based on ZnO nanorods with a variable threshold cutoff voltage SEMICONDUCTORS, 47 (4). pp. 538-542.

Full text not available from this repository.
Item Type: Article
Authors :
NameEmailORCID
Gruzintsev, ANUNSPECIFIEDUNSPECIFIED
Redkin, ANUNSPECIFIEDUNSPECIFIED
Opoku, CUNSPECIFIEDUNSPECIFIED
Shkunov, MNm.shkunov@surrey.ac.ukUNSPECIFIED
Date : 1 April 2013
Identification Number : https://doi.org/10.1134/S1063782613040106
Uncontrolled Keywords : Science & Technology, Physical Sciences, Physics, Condensed Matter, Physics, PHYSICS, CONDENSED MATTER, OPTICAL-PROPERTIES, ROOM-TEMPERATURE, NANOWIRE
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:48
Last Modified : 17 May 2017 15:06
URI: http://epubs.surrey.ac.uk/id/eprint/836790

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