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Analysis of steam oxidation of crystalline SI1-XGEX using AFM and CABOOM

Fobelets, K, Alaudeen, A, Ahmad, MM, Clowes, S and Zhang, J (2004) Analysis of steam oxidation of crystalline SI1-XGEX using AFM and CABOOM Proceedings - Electrochemical Society, 7. pp. 175-179.

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Abstract

Characterization of the Ge concentration in a Si1-xGe x heterojunction for x varying from 5% to 40% in steps of 5% is done by beveling and wet thermal oxidation of the exposed layers. The resulting difference in oxide thickness as a function of Ge concentration is visualized due to light interference. Different Ge concentrations are seen as different colors through an optical microscope. CABOOM - Characterization of the Alloy concentration by Beveling, Oxidation and Optical Microscopy - in combination with AFM - Atomic Force Microscopy, is used as a tool to study the oxidation kinetics of unstrained, crystalline Si1-xGex by wet thermal oxidation.

Item Type: Article
Authors :
NameEmailORCID
Fobelets, KUNSPECIFIEDUNSPECIFIED
Alaudeen, AUNSPECIFIEDUNSPECIFIED
Ahmad, MMUNSPECIFIEDUNSPECIFIED
Clowes, Ss.clowes@surrey.ac.ukUNSPECIFIED
Zhang, JUNSPECIFIEDUNSPECIFIED
Date : 1 December 2004
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:47
Last Modified : 17 May 2017 15:06
URI: http://epubs.surrey.ac.uk/id/eprint/836755

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