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InSb epilayers on GaAs(100) for spintronic and magneto-resistive sensor applications

Zhang, T, Debnath, M, Clowes, SK, Branford, WR, Bennett, A, Roberts, C, Cohen, LF and Stradling, RA (2004) InSb epilayers on GaAs(100) for spintronic and magneto-resistive sensor applications In: 11th International Conference on Narrow Gap Semiconductors, 2003-06-16 - 2003-06-20, UNIV BUFFALO, BUFFALO, NEW YORK.

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Item Type: Conference or Workshop Item (UNSPECIFIED)
Authors :
NameEmailORCID
Zhang, TUNSPECIFIEDUNSPECIFIED
Debnath, MUNSPECIFIEDUNSPECIFIED
Clowes, SKs.clowes@surrey.ac.ukUNSPECIFIED
Branford, WRUNSPECIFIEDUNSPECIFIED
Bennett, AUNSPECIFIEDUNSPECIFIED
Roberts, CUNSPECIFIEDUNSPECIFIED
Cohen, LFUNSPECIFIEDUNSPECIFIED
Stradling, RAUNSPECIFIEDUNSPECIFIED
Date : 1 January 2004
Identification Number : 10.1016/j.physe.2003.08.006
Contributors :
ContributionNameEmailORCID
publisherELSEVIER SCIENCE BV, UNSPECIFIEDUNSPECIFIED
Uncontrolled Keywords : Science & Technology, Physical Sciences, Nanoscience & Nanotechnology, Physics, Condensed Matter, Science & Technology - Other Topics, Physics, NANOSCIENCE & NANOTECHNOLOGY, PHYSICS, CONDENSED MATTER, InSb, Hall effect, high mobility, MOLECULAR-BEAM EPITAXY, HIGH-QUALITY INSB, GROWTH, GAAS, FILMS, MBE
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:47
Last Modified : 17 May 2017 15:06
URI: http://epubs.surrey.ac.uk/id/eprint/836744

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