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Broadband near-infrared emission from bismuth doped silicon oxide films prepared by ion-implantation

Halsall, MP, Crowe, IF, Southern, R, Yang, P and Gwilliam, RM (2012) Broadband near-infrared emission from bismuth doped silicon oxide films prepared by ion-implantation Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD. pp. 23-24.

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Abstract

A series of Bismuth (Bi) doped silicon oxide layers were prepared by ion-implantation. All the samples exhibit strong room temperature near-infrared photoluminescence in the range 1.0μm-1.3μm which we assign to Bi related centres in the oxide matrix, similar to that reported previously for Bi doped oxides fabricated by alternative methods. The activation and sensitization of these luminescent centres was studied as a function of anneal temperature and co-doping with silicon (Si) and aluminium (Al). Comparision with Erbium doped films prepared in a similar way reveals comparable emission intensity from the Bi doped films. The even wider Bi-related luminescence makes this system very promising for use in on-chip, broadband lasers and amplifiers, particularly for use in telecommunications. © 2012 IEEE.

Item Type: Article
Authors :
NameEmailORCID
Halsall, MPUNSPECIFIEDUNSPECIFIED
Crowe, IFUNSPECIFIEDUNSPECIFIED
Southern, RUNSPECIFIEDUNSPECIFIED
Yang, Ppengyuan.yang@surrey.ac.ukUNSPECIFIED
Gwilliam, RMr.gwilliam@surrey.ac.ukUNSPECIFIED
Date : 2012
Identification Number : https://doi.org/10.1109/COMMAD.2012.6472341
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:47
Last Modified : 17 May 2017 15:06
URI: http://epubs.surrey.ac.uk/id/eprint/836726

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