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Atomic layer deposition of hafnium silicate from HfCl4, SiCl4, and H2O

Fedorenko, Y, Swerts, J, Maes, JW, Tois, E, Haukka, S, Wang, CG, Wilk, G, Delabie, A, Deweerd, W and De Gendt, S (2007) Atomic layer deposition of hafnium silicate from HfCl4, SiCl4, and H2O Electrochemical and Solid-State Letters, 10 (5). pp. 149-152.

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Atomic layer deposition of Hf-Si-O and Hf O2 using Hf Cl4, Si Cl4, and H2 O was studied. The growth per cycle and composition of Hf-Si-O films were analyzed as a function of the growth temperature, the pulse sequence, and the precursor doses. The growth of Hf-Si-O from Hf Cl4 Si Cl4 H2 O appeared to be determined not only by the -OH density but also by the -OH bonding mode. The Hf Cl4 Si Cl4 H2 O chemistry results in carbon-free films with low chlorine impurity content. The Hf-Si-O films of Hf-rich composition are meeting the leakage-current requirements for 45 nm technology node and below. © 2007 The Electrochemical Society.

Item Type: Article
Divisions : Surrey research (other units)
Authors :
Swerts, J
Maes, JW
Tois, E
Haukka, S
Wang, CG
Wilk, G
Delabie, A
Deweerd, W
De Gendt, S
Date : 23 March 2007
DOI : 10.1149/1.2712051
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:47
Last Modified : 24 Jan 2020 22:50

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