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Electronic structure of the interface of aluminum nitride with Si(100)

Badylevich, M, Shamuilia, S, Afanas'Ev, VV, Stesmans, A, Fedorenko, YG and Zhao, C (2008) Electronic structure of the interface of aluminum nitride with Si(100) Journal of Applied Physics, 104 (9).

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The band alignment at the interfaces of Si(100) with amorphous (a-) and crystallized (c-) AlN layers was analyzed using internal photoemission and photoconductivity spectroscopy. The bandgap of thin a-AlN layers grown using atomic layer deposition is found to be 5.8±0.1 eV, widening to 6.5±0.2 eV after annealing induced crystallization into the wurtzite phase. Internal photoemission of electrons from the Si valence band to the AlN conduction band was found to exhibit the same energy threshold of 3.2±0.1 eV in amorphous and crystallized AlN. The energy band diagrams of a-AlN/Si (100) and c-AlN/Si (100) interfaces are established. © 2008 American Institute of Physics.

Item Type: Article
Divisions : Surrey research (other units)
Authors :
Badylevich, M
Shamuilia, S
Afanas'Ev, VV
Stesmans, A
Zhao, C
Date : 24 November 2008
DOI : 10.1063/1.2966482
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:47
Last Modified : 24 Jan 2020 22:50

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