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Energy levels in ideal and reconstructed models of a silicon vacancy

Heggie, M and Jones, R (1981) Energy levels in ideal and reconstructed models of a silicon vacancy Journal of Physics C: Solid State Physics, 14 (31). pp. 4603-4609.

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Abstract

The recursion method is used to investigate the electronic states of ideal and reconstructed vacancy models in silicon. The matrix elements of the Hamiltonian are taken from Pandey and Phillips, but atoms coupling across the vacancy are treated as first nearest neighbours. The exponential decay factor, beta , for these elements is fitted to self-consistent calculations of the ideal vacancy. The shifts in levels of reconstructed vacancies appear weaker (by up to a factor 2) than those of self-consistent calculations.

Item Type: Article
Authors :
NameEmailORCID
Heggie, Mm.heggie@surrey.ac.ukUNSPECIFIED
Jones, RUNSPECIFIEDUNSPECIFIED
Date : 1 December 1981
Identification Number : 10.1088/0022-3719/14/31/010
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:43
Last Modified : 17 May 2017 12:43
URI: http://epubs.surrey.ac.uk/id/eprint/836491

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