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ENERGY LEVELS AND PROPERTIES OF DEFECTS ON RECONSTRUCTED DISLOCATIONS IN SILICON.

Heggie, MI and Jones, R (1983) ENERGY LEVELS AND PROPERTIES OF DEFECTS ON RECONSTRUCTED DISLOCATIONS IN SILICON. Journal de Physique (Paris), Colloque, 44 (9). pp. 43-47.

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Abstract

The results of calculations of the energy levels of anti-phase (soliton) defects and a vacancy-soliton complex on reconstructed 90 degree and 30 degree partials in silicon are given. A Phillips-Pandey Hamiltonian and the recursion method were used to evaluate these levels and explore the effect of relaxation of surrounding atoms. These calculations should have relevance to either well-annealed samples of plastically deformed silicon or to samples deformed sufficiently slowly that point defect clusters are not introduced. Such samples are diamagnetic. The diamagnetism of a defect with a single dangling bond can be explained by the Anderson negative-U mechanism and estimates are given which suggest the anti-phase defect (soliton) is indeed of this type. Some implications of this are included.

Item Type: Article
Authors :
NameEmailORCID
Heggie, MIm.heggie@surrey.ac.ukUNSPECIFIED
Jones, RUNSPECIFIEDUNSPECIFIED
Date : 1 September 1983
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 12:43
Last Modified : 17 May 2017 12:43
URI: http://epubs.surrey.ac.uk/id/eprint/836489

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